Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs

Author

Jingjing Wanyan ; Zhaoqi Sun ; Shiwei Shi ; Mingzai Wu ; Gang He ; Guang Li

Author_Institution

Sch. of Phys. & Mater. Sci., Anhui Univ., Hefei, China

fYear

2013

fDate

19-22 Aug. 2013

Firstpage

29

Lastpage

30

Abstract

A visible-blind ultraviolet GaN back-illuminated avalanche photodiode with separate absorption and multiplication regions are simulated based on drift-diffusion equation. The current-voltage characteristics of the device have been numerically obtained. The result is in good agreement with the experimental data. It was found that the thickness of the multiplication layer is important to improve the electrical field profiles and spectral response characteristics. A peak responsivity of 106.5mA/W is achieved at 364 nm corresponding to the cutoff wavelength of GaN.

Keywords

III-V semiconductors; avalanche photodiodes; electrical conductivity; gallium compounds; numerical analysis; photodetectors; ultraviolet detectors; wide band gap semiconductors; APD; GaN; absorption region; current-voltage characteristics; cutoff wavelength; drift-diffusion equation; electrical field dependence; electrical field profiles; multiplication layer thickness; multiplication region thickness; photoresponse; spectral response characteristics; visible-blind ultraviolet back-illuminated avalanche photodiode; Absorption; Avalanche photodiodes; Charge carrier processes; Electric fields; Gallium nitride; Mathematical model; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on

Conference_Location

Vancouver, BC

ISSN

2158-3234

Print_ISBN

978-1-4673-6309-9

Type

conf

DOI

10.1109/NUSOD.2013.6633108

Filename

6633108