• DocumentCode
    3543752
  • Title

    Thermal spin transport and applications

  • Author

    Huang, Shell Ying ; Wang, W.G. ; Qu, Dexin ; Lee, S.F. ; Kwo, J. ; Chien, C.L.

  • Author_Institution
    Dept. of Phys. & Astron., Johns Hopkins Univ., Baltimore, MD, USA
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    Spin caloritronics, exploiting the interaction between spin with heat currents, offers a promising path to further reduction in both the size and power consumption of solid state devices. Despite recent observations of spin dependent thermal transport by several groups, the underlying physical mechanism remains unsettled.1-3 Our study has demonstrated the profound effect of substrate on the spin-dependent thermal transport by patterned ferromagnetic thin films.4 This unexpected behavior is due to an out-of-plane temperature gradient imposed by the thermal conduction through the substrate, resulting in a mixture of anomalous Nernst effects (ANE) and spin Seebeck effect (SSE)1-3. Only with substrate-free sample have we determined the intrinsic spin-dependent thermal transport with characteristics and field sensitivity similar to those of anisotropic magnetoresistance (AMR) effect and planer Hall effect (PHE).4 These effects are sensitive to magnetic fields, encouraging for future applications such as spin thermoelectric coating, and sensors.
  • Keywords
    Hall effect; Seebeck effect; heat conduction; magnetoelectronics; magnetoresistance; spin coating; AMR effect; ANE; Nernst effects; PHE; SSE; anisotropic magnetoresistance effect; field sensitivity; heat currents; intrinsic spin-dependent thermal transport; magnetic fields; out-of-plane temperature gradient; patterned ferromagnetic thin films; planar Hall effect; power consumption; sensors; solid state devices; spin Seebeck effect; spin caloritronics; spin thermoelectric coating; substrate-free sample; thermal conduction; Heating; Magnetic field measurement; Substrates; Temperature measurement; Thermal conductivity; Thermoelectricity; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479022
  • Filename
    6479022