DocumentCode :
3543755
Title :
High-temperature operation of 1.3-/spl mu/m AlGaInAs/InP strained multiple quantum well lasers with an AlInAs electron stopper layer
Author :
Munakata, T. ; Takemasa, K. ; Kabayashi, M. ; Wada, H.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
293
Abstract :
Summary form only given. Recently, AlGaInAs-InP lasers have been demonstrated to show superior temperature characteristics as compared to conventional GaInAsP/InP lasers, which is due to a larger conduction band offset of the AlGaInAs-InP systems and the resultant decrease in the electron overflow out of the multiple quantum well (MQW) active layers. In this study, we investigated the effect of the electron stopper layer (ESL) and observed a considerable improvement in the characteristic temperatures of the threshold current and slope efficiency, especially at higher temperatures, resulting in a higher operation temperature in the lasers with the ESL.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; 1.3 mum; 1.3-/spl mu/m AlGaInAs/InP strained multiple quantum well lasers; AlGaInAs-InP; AlGaInAs-InP lasers; AlGaInAs-InP systems; AlInAs electron stopper layer; GaInAsP/InP lasers; MQW active layers; characteristic temperatures; conduction band offset; electron overflow; electron stopper layer; high-temperature operation; higher operation temperature; slope efficiency; superior temperature characteristics; threshold current; Electrons; Indium phosphide; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Testing; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.676183
Filename :
676183
Link To Document :
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