Optimization of p-doping profile of 1.3-/spl mu/m InGaAsP/InP MQW lasers for high-temperature operation

Author

Donetsky, D.V. ; Reynolds, C.L. ; Belenky, G.L. ; Shtengel, G.E. ; Kazarinov, R.F. ; Luryi, S.

Author_Institution

New York Univ., NY, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

302

Lastpage

303

Abstract

Summary form only given. It was shown theoretically and experimentally that an increase of p-doping concentration in the vicinity of a separate confinement heterostructure (SCH) of 1.3-/spl mu/m multiple quantum well (MQW) InGaAsP-InP lasers leads to improvement of the device temperature performance. Tne present work shows that alignment of p-doping profile within the SCH layer allows us to achieve even lower threshold current and to minimize temperature sensitivity of external efficiency.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optimisation; quantum well lasers; semiconductor doping; 1.3 mum; InGaAsP-InP; InGaAsP-InP lasers; InGaAsP/InP MQW lasers; SCH layer; device temperature performance; external efficiency; high-temperature operation; lower threshold current; p-doping concentration; p-doping profile alignment; p-doping profile optimisation; separate confinement heterostructure laser; temperature sensitivity; Doping profiles; Laser modes; Loss measurement; Optical losses; Optical sensors; Quantum well devices; Quantum well lasers; Temperature dependence; Temperature sensors; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676197

Filename

676197