On the degradation of field-plate assisted RESURF power devices

Author

Boksteen, Boni K. ; Dhar, Sudipta ; Ferrara, A. ; Heringa, Anco ; Hueting, Raymond J. E. ; Koops, G.E.J. ; Salm, C. ; Schmitz, Jurriaan

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2012

fDate

10-13 Dec. 2012

Abstract

Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.

Keywords

power semiconductor devices; stress analysis; I-V degradation predictions; device I-V characteristics; field-plate assisted RESURF power device degradation; field-plate assisted reduced surface field devices; high-voltage stress; hot-carrier degradation phenomena; noninvasive low-voltage leakage characterization; surface generation velocity profiles; Analytical models; Current measurement; Degradation; Leakage current; Silicon; Stress; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479036

Filename

6479036