Title :
On the degradation of field-plate assisted RESURF power devices
Author :
Boksteen, Boni K. ; Dhar, Sudipta ; Ferrara, A. ; Heringa, Anco ; Hueting, Raymond J. E. ; Koops, G.E.J. ; Salm, C. ; Schmitz, Jurriaan
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
Abstract :
Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.
Keywords :
power semiconductor devices; stress analysis; I-V degradation predictions; device I-V characteristics; field-plate assisted RESURF power device degradation; field-plate assisted reduced surface field devices; high-voltage stress; hot-carrier degradation phenomena; noninvasive low-voltage leakage characterization; surface generation velocity profiles; Analytical models; Current measurement; Degradation; Leakage current; Silicon; Stress; Temperature distribution;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479036
