Transition from radiative to nonradiative recombination in 1.3-/spl mu/m and 1.5-/spl mu/m InGaAs(P) multiple quantum well semiconductor diode lasers

Author

Sweeney, S.J. ; Phillips, A.F. ; Adams, A.R. ; O´Reilly, E.P. ; Silver, M. ; Thijs, P.J.A.

Author_Institution

Dept. of Phys., Surrey Univ., Guildford, UK

fYear

1998

fDate

3-8 May 1998

Firstpage

304

Abstract

Summary form only given. Measurements of the threshold current, I/sub th/ as a function of temperature, T were performed on 1.3 /spl mu/m and 1.5 /spl mu/m compressively strained InGaAsP MQW laser diodes from 90 K to 370 K and the temperature sensitivity parameter, T/sub 0/ calculated.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; laser variables measurement; optical testing; quantum well lasers; semiconductor device testing; sensitivity; 1.3 mum; 1.5 mum; 90 to 370 K; InGaAsP; InGaAsP multiple quantum well semiconductor diode lasers; compressively strained InGaAsP MQW laser diodes; nonradiative recombination; radiative recombination; temperature sensitivity parameter; threshold current measurement; Brazil Council; Charge carrier density; Current measurement; Electrons; Laser theory; Laser tuning; Radiative recombination; Semiconductor device noise; Spontaneous emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676199

Filename

676199