DocumentCode
3543877
Title
Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection
Author
Radhakrishna, Ujwal ; Lan Wei ; Dong-Seup Lee ; Palacios, T. ; Antoniadis, D.
Author_Institution
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2012
fDate
10-13 Dec. 2012
Abstract
A physics-based compact transport and charge model for GaN HEMTs has been developed. The model includes effects such as self-heating, non-linear access region behavior, electron-phonon interaction etc. The model is validated against fabricated devices and is used to evaluate fT improvements in short channel devices. The model is also a suitable base for GaN FET circuit simulation compact models.
Keywords
III-V semiconductors; electron-phonon interactions; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; FET circuit simulation compact models; GaN; electron-phonon interaction; nonlinear access region behavior; physics-based HEMT transport model; physics-based compact transport-charge model; self-heating; short channel devices; Capacitance; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Performance evaluation; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479038
Filename
6479038
Link To Document