Influence of p-doping and waveguide composition on the lasing properties of 630-nm band AlGaInP laser diodes

Summary form only given. The problems of small band discontinuities and proper p-doping in the material system (Al/sub y/Ga/sub (1-y)/)/sub x/In/sub (1-x)/P are often discussed with respect to achieving high barriers for a reduction of thermal carrier leakage into the cladding layers. The choice of dopant material for achieving a maximum doping level was the subject of detailed investigations. In this contribution we additionally focus on the dopant concentration profile in the samples, obtained on laser structures with Al/sub .5/In/sub .5/P cladding layers using CP/sub 2/Mg as p-doping precursor.