Resonant-body silicon nanowire field effect transistor without junctions

We demonstrate the first implementation of a highly doped, silicon nanowire electromechanical resonator that exploits the depletion charge modulation in a junctionless FET to transduce mechanical motion on-chip. The resonator, with a typical length between 1 and 2 μm, a total height of 45 nm and a total width of 65 nm, is coupled via two lateral 60 nm air-gap gate electrodes. A fundamental resonance frequency of up to 226 MHz is detected in the drain current. This device is integrated in an FD-SOI-CMOS platform using conventional 8" inch wafer technology, which offers unique opportunities for compact sensing platforms interfaced with CMOS on a single chip.