Large-scale assembly of tunable resonant-body carbon nanotube transistors without hysteresis

We report the large-scale fabrication and characterization of self-aligned very-high frequency (VHF) resonant-body carbon nanotube (CNT) field-effect transistors (RB-CNTFETs) in a dual-gate configuration. For the first time, an integration density of >10⁶ RB-CNTFETs/cm², a yield of ~ 80% and nano-precision have been achieved together. Electrical actuation/detection and novel in situ upward/ downward resonance frequency tuning are reported at room temperature (RT). Hysteresis-free RB-CNTFETs with negligible contamination have been demonstrated by chemical/thermal treatments. The experimentally reported RB-CNTFETs offer promising features for both radio-frequency (RF) and ultra-high resolution sensing applications.