• DocumentCode
    3543954
  • Title

    Design considerations for large-aperture single-mode oxide-confined VCSELs

  • Author

    Kalosha, V.P. ; Ledentsov, Nikolay N. ; Bimberg, Dieter

  • Author_Institution
    Inst. for Solid State Phys., Tech. Univ. Berlin, Berlin, Germany
  • fYear
    2013
  • fDate
    19-22 Aug. 2013
  • Firstpage
    91
  • Lastpage
    92
  • Abstract
    Three-dimensional cold-cavity optical modes of oxide-confined AlGaAs/GaAs VCSELs at 850 nm were simulated taking into account the material dispersion to study dependencies of the lasing modal content upon the thickness of the aperture, its position with respect to the mode standing wave and the separation from the cavity. Positioning the thin aperture layer in the mode nodes to decrease the diffraction at low-index oxidized areas or utilizing the thick aperture and thick low Al-content layers above the aperture to promote the lateral leakage of the transverse higher-order modes allow single-mode laser operation to extend to the aperture diameters as large as 10 μm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser transitions; optical dispersion; surface emitting lasers; AlGaAs-GaAs; design consideration; large-aperture single-mode oxide-confined VCSEL; laser transitions; lasing modal content; low-index oxidized areas; material dispersion; mode standing wave; three-dimensional cold-cavity optical modes; transverse higher-order modes; wavelength 850 nm; Apertures; Diffraction; Dispersion; Laser modes; Solids; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
  • Conference_Location
    Vancouver, BC
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4673-6309-9
  • Type

    conf

  • DOI
    10.1109/NUSOD.2013.6633139
  • Filename
    6633139