Title :
VLSI platform for the monolithic integration of single-crystal Si NEMS capacitive resonators with low-cost CMOS
Author :
Arcamone, J. ; Savoye, Mylene ; Arndt, Gregory ; Philippe, Julien ; Marcoux, C. ; Colinet, E. ; Duraffourg, L. ; Magis, T. ; Laurens, M. ; Monroy-Aguirre, A. ; Mazoyer, P. ; Ancey, P. ; Robert, Philippe ; Ollier, E.
Author_Institution :
CEA, LETI, Grenoble, France
Abstract :
This work constitutes the first demonstration of monolithic integration of single-crystal silicon capacitive NEMS resonators with CMOS. With this approach, the efficiency of the electrical detection of the NEMS motion is outstanding and achieved with only seven transistors that are fabricated with a completely unmodified and very low-cost 0.35μm bulk CMOS technology.
Keywords :
CMOS integrated circuits; VLSI; elemental semiconductors; micromechanical resonators; nanoelectromechanical devices; nanofabrication; silicon; NEMS motion; Si; VLSI platform; electrical detection; low-cost bulk CMOS technology; monolithic integration; single-crystal silicon capacitive NEMS resonators; size 0.35 mum; CMOS integrated circuits; CMOS technology; Capacitance; Nanoelectromechanical systems; Resonant frequency; Silicon; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479048
