Title :
Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method
Author :
Gupta, Swastik ; Vincent, B. ; yang, Bo ; Lin, Dongyang ; Gencarelli, F. ; Lin, J.-Y Jason ; Chen, Ru Shan ; Richard, O. ; Bender, Hugo ; Magyari-Kope, B. ; Caymax, M. ; Dekoster, Johan ; Nishi, Yoshio ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We present a detailed theoretical analysis to motivate GeSn for CMOS logic. High quality GeSn films have been obtained on Ge-on-Si using a CVD process. A novel surface passivation scheme is presented to achieve record low trap densities at high-κ/GeSn interface. Using the novel surface passivation method, combined with a low thermal budget device fabrication process, n-channel MOSFETs on GeSn with channel Sn content as high as 8.5% have been demonstrated for the first time.
Keywords :
CMOS logic circuits; MOSFET; chemical vapour deposition; germanium compounds; high-k dielectric thin films; oxidation; ozonation (materials processing); passivation; semiconductor thin films; CMOS logic; CVD process; GeSn; high mobility channel nMOSFET; high quality films; high-κ interface; low thermal budget device fabrication process; low trap density; ozone oxidation method; surface passivation scheme; Logic gates; MOSFETs; Materials; Oxidation; Passivation; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479052
