Title :
Terahertz plasmon resonances in GaN and graphene
Author :
Lin Wang ; Anqi Yu ; Xiaoshuang Chen ; Weida Hu ; Wei Lu
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
The plasmon resonance and tunability have been investigated in GaN-based and graphene device, the good agreement between theory and experiments indicate the potentially advantages of GaN device for filling the terahertz (THz) gap. Stronger resonant absorption will lead to the hydrodynamic rectifying of THz radiation in wide spectrum region, paving the way for self-coupling and detection of THz radiation in multiple quantum systems.
Keywords :
III-V semiconductors; gallium compounds; graphene; microwave photonics; terahertz wave detectors; terahertz wave generation; terahertz wave spectra; wide band gap semiconductors; C; GaN; GaN-based device; THz radiation; graphene device; hydrodynamic rectifying; multiple quantum systems; resonant absorption; self-coupling; terahertz plasmon resonances; Gallium nitride; Graphene; HEMTs; MODFETs; Plasma waves; Plasmons; Resonant frequency;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633144
