• DocumentCode
    3544051
  • Title

    Insights on radio frequency bilayer graphene FETs

  • Author

    Fiori, G. ; Iannaccone, Giuseppe

  • Author_Institution
    Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    In this work, we investigate through atomistic simulations the possible improvements achievable by using bilayer graphene as FET channel material for radio frequency applications, and the related challenges. Bilayer graphene shows better performance as compared to monolayer graphene in terms of larger output resistance, which in turns is beneficial both for the low frequency voltage gain, and the maximum gain frequency.
  • Keywords
    UHF field effect transistors; field effect transistors; graphene; C; FET channel material; atomistic simulations; monolayer graphene; radiofrequency bilayer graphene FET; Field effect transistors; Graphene; Photonic band gap; Resistance; Transconductance; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479059
  • Filename
    6479059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3544051