Title :
Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs
Author :
Togo, Mitsuhiro ; Lee, Jae W. ; Pantisano, L. ; Chiarella, T. ; Ritzenthaler, R. ; Krom, Raymond ; Hikavyy, Andriy ; Loo, Roger ; Rosseel, Erik ; Brus, S. ; Maes, J.W. ; Machkaoutsan, V. ; Tolle, John ; Eneman, Geert ; Keersgieter, A.D. ; Boccardi, Guilla
Author_Institution :
Imec, K.U. Leuven, Leuven, Belgium
Abstract :
A P-SiC (Phosphorus doped Si1-xCx) SD (Source Drain) was developed on bulk-Si based nMOS FinFETs (n-FinFETs). P-SiC epitaxial growth on SD provides strain to boost n-FinFET mobility and drive current. Combination of LA (Laser Anneal) and low temperature RTA recovers P-SiC and PSi (Phosphorus doped Si, Si1-xPx) strain. A SiGe clad channel on pMOS FinFETs (p-FinFETs) was investigated. Narrower Si fin and SiGe epitaxial growth on fins increase mobility and drive current, which is based on the same carrier transport mechanism as conventional phonon scattering without velocity overshoot around 14nm node.
Keywords :
Ge-Si alloys; MOSFET; epitaxial growth; laser beam annealing; phosphorus; semiconductor epitaxial layers; semiconductor growth; silicon compounds; wide band gap semiconductors; Si; SiC:P; SiGe; bulk-silicon based nMOS FinFET; carrier transport mechanism; drive current; epitaxial growth; laser annealling; low temperature RTA; n-FinFET; n-FinFET mobility; pMOS FinFET; phonon scattering; phosphorus doped source drain; scaled bulk FinFET; Annealing; Epitaxial growth; FinFETs; Silicon; Silicon germanium; Strain;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479064
