Structure design of HgCdTe mid-wavelength photon trapping infrared focal plane arrays

Author

Peng Zhang ; Zhen-Hua Ye ; Chun Lin ; Xiao-Ning Hu ; Rui-Jun Ding ; Li He

Author_Institution

Key Lab. of Infrared Imaging Mater. & Detectors, Shanghai Inst. of Tech. Phys., Shanghai, China

fYear

2013

fDate

19-22 Aug. 2013

Firstpage

129

Lastpage

130

Abstract

Photon trapping structure in HgCdTe mid-wavelength infrared detectors is investigated in this study by exploiting the finite-difference time-domain (FDTD) technique. The quantum efficiency and the current-voltage characteristics have been numerically simulated, using commercial Technology Computer Aided Design (TCAD) software Apsys. Simulation results indicate that in contrast to the regular mesa structure, the photon trapping structure can reduce dark current and noise without degrading quantum efficiency.

Keywords

II-VI semiconductors; cadmium compounds; finite difference time-domain analysis; focal planes; infrared detectors; mercury compounds; optical design techniques; photodetectors; semiconductor device models; technology CAD (electronics); FDTD technique; HgCdTe; TCAD software Apsys; current-voltage characteristics; dark current; finite-difference time-domain technique; mid-wavelength infrared detectors; mid-wavelength photon trapping infrared focal plane arrays; numerical simulation; optical noise; photon trapping structure; quantum efficiency; structural design; technology computer aided design; Absorption; Charge carrier processes; Dark current; Finite difference methods; Noise; Photonics; Time-domain analysis; FDTD; HgCdTe; photon trapping structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on

Conference_Location

Vancouver, BC

ISSN

2158-3234

Print_ISBN

978-1-4673-6309-9

Type

conf

DOI

10.1109/NUSOD.2013.6633158

Filename

6633158