Numerical analysis of multiplication layer for InGaAs/InP single photon avalanche diodes

Author

Zeng, Q.Y. ; Wang, Wei Jhih ; Hu, W.D. ; Li, Ning ; Lu, Wenchao

Author_Institution

Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China

fYear

2013

fDate

19-22 Aug. 2013

Firstpage

135

Lastpage

136

Abstract

In this paper, we theoretically study the electrical properties of a separate absorption, grading, charge, and multiplication InGaAs/InP avalanche photodiodes(APD) on the multiplication layer for different carrier lifetime, doping and traps concentration. These characteristics can be used to analyze some problems in the process of device fabrication.

Keywords

III-V semiconductors; avalanche photodiodes; carrier lifetime; doping profiles; electrical conductivity; gallium arsenide; indium compounds; numerical analysis; APD; InGaAs-InP; carrier lifetime; charge avalanche photodiodes; doping concentration; electrical properties; grading avalanche photodiodes; multiplication avalanche photodiodes; multiplication layer; numerical analysis; separate absorption avalanche photodiodes; single photon avalanche diodes; trap concentration; Charge carrier lifetime; Dark current; Doping; Fabrication; Indium gallium arsenide; Indium phosphide; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on

Conference_Location

Vancouver, BC

ISSN

2158-3234

Print_ISBN

978-1-4673-6309-9

Type

conf

DOI

10.1109/NUSOD.2013.6633161

Filename

6633161