Title :
Numerical analysis of multiplication layer for InGaAs/InP single photon avalanche diodes
Author :
Zeng, Q.Y. ; Wang, Wei Jhih ; Hu, W.D. ; Li, Ning ; Lu, Wenchao
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
In this paper, we theoretically study the electrical properties of a separate absorption, grading, charge, and multiplication InGaAs/InP avalanche photodiodes(APD) on the multiplication layer for different carrier lifetime, doping and traps concentration. These characteristics can be used to analyze some problems in the process of device fabrication.
Keywords :
III-V semiconductors; avalanche photodiodes; carrier lifetime; doping profiles; electrical conductivity; gallium arsenide; indium compounds; numerical analysis; APD; InGaAs-InP; carrier lifetime; charge avalanche photodiodes; doping concentration; electrical properties; grading avalanche photodiodes; multiplication avalanche photodiodes; multiplication layer; numerical analysis; separate absorption avalanche photodiodes; single photon avalanche diodes; trap concentration; Charge carrier lifetime; Dark current; Doping; Fabrication; Indium gallium arsenide; Indium phosphide; Photonics;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633161
