• DocumentCode
    3544149
  • Title

    Influence of surface and polarization potentials on the electronic and optical properties of InxGa1−xN/GaN axial nanowire heterostructures

  • Author

    Marquardt, Oliver ; Hauswald, Christian ; Wolz, Martin ; Geelhaar, L. ; Brandt, Oliver

  • Author_Institution
    Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
  • fYear
    2013
  • fDate
    19-22 Aug. 2013
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    We study the influence of surface and polarization potentials on the electronic properties of axial InxGa1-xN/GaN nanowire heterostructures. Our simulations indicate nontrivial, competing influences of both these potentials on the spatial separation of electrons and holes, which are well suited to explain previous experimental observations.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light polarisation; nanophotonics; nanowires; surface potential; wide band gap semiconductors; InxGa1-xN-GaN; axial nanowire heterostructures; electronic properties; optical properties; polarization potential; spatial electron-hole separation; surface potential; Charge carrier processes; Electric potential; Gallium nitride; Piezoelectric polarization; Strain; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
  • Conference_Location
    Vancouver, BC
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4673-6309-9
  • Type

    conf

  • DOI
    10.1109/NUSOD.2013.6633162
  • Filename
    6633162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3544149