DocumentCode :
3544149
Title :
Influence of surface and polarization potentials on the electronic and optical properties of InxGa1−xN/GaN axial nanowire heterostructures
Author :
Marquardt, Oliver ; Hauswald, Christian ; Wolz, Martin ; Geelhaar, L. ; Brandt, Oliver
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
fYear :
2013
fDate :
19-22 Aug. 2013
Firstpage :
137
Lastpage :
138
Abstract :
We study the influence of surface and polarization potentials on the electronic properties of axial InxGa1-xN/GaN nanowire heterostructures. Our simulations indicate nontrivial, competing influences of both these potentials on the spatial separation of electrons and holes, which are well suited to explain previous experimental observations.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light polarisation; nanophotonics; nanowires; surface potential; wide band gap semiconductors; InxGa1-xN-GaN; axial nanowire heterostructures; electronic properties; optical properties; polarization potential; spatial electron-hole separation; surface potential; Charge carrier processes; Electric potential; Gallium nitride; Piezoelectric polarization; Strain; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
ISSN :
2158-3234
Print_ISBN :
978-1-4673-6309-9
Type :
conf
DOI :
10.1109/NUSOD.2013.6633162
Filename :
6633162
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3544149
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