Title :
Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs
Author :
Miki, Hiroyuki ; Tega, N. ; Yamaoka, Masanao ; Frank, David J. ; Bansal, Ankur ; Kobayashi, Masato ; Cheng, K. ; D´Emic, Christopher P. ; Ren, Zhang ; Wu, Shiqian ; Yau, Jeng-Bang ; Zhu, Yujia ; Guillorn, Michael A. ; Park, DaeLim ; Haensch, Wilfried ; Le
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
Abstract :
This paper presents results of statistical analysis of RTN in highly scaled HKMG FETs. A robust algorithm to extract multiple-trap RTN is proposed and applied to show that RTN can cause serious variation even when HKMG and undoped channel are introduced. We further focus on hysteretic behavior caused by RTN with time constants much longer than the circuit timescale. This reveals that RTN also induces novel instabilities such as short-term BTI and logic delay uncertainty. Extraction of RTN in SRAM arrays is also presented to discuss its impact on operational stability.
Keywords :
MOSFET; SRAM chips; circuit stability; random noise; semiconductor device measurement; semiconductor device noise; statistical analysis; SRAM array; highly scaled HKMG MOSFET; highly scaled-down high-κ-metal-gate MOSFET; hysteretic behavior; logic delay uncertainty; multiple-trap RTN extraction; operational stability; random telegraph noise; short-term BTI; statistical measurement analysis; undoped channel; Couplings; Delay; Field effect transistors; Hidden Markov models; Logic gates; Noise; Resource description framework;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479071
