Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs

Author

Miki, Hiroyuki ; Tega, N. ; Yamaoka, Masanao ; Frank, David J. ; Bansal, Ankur ; Kobayashi, Masato ; Cheng, K. ; D´Emic, Christopher P. ; Ren, Zhang ; Wu, Shiqian ; Yau, Jeng-Bang ; Zhu, Yujia ; Guillorn, Michael A. ; Park, DaeLim ; Haensch, Wilfried ; Le

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo, Japan

fYear

2012

fDate

10-13 Dec. 2012

Abstract

This paper presents results of statistical analysis of RTN in highly scaled HKMG FETs. A robust algorithm to extract multiple-trap RTN is proposed and applied to show that RTN can cause serious variation even when HKMG and undoped channel are introduced. We further focus on hysteretic behavior caused by RTN with time constants much longer than the circuit timescale. This reveals that RTN also induces novel instabilities such as short-term BTI and logic delay uncertainty. Extraction of RTN in SRAM arrays is also presented to discuss its impact on operational stability.

Keywords

MOSFET; SRAM chips; circuit stability; random noise; semiconductor device measurement; semiconductor device noise; statistical analysis; SRAM array; highly scaled HKMG MOSFET; highly scaled-down high-κ-metal-gate MOSFET; hysteretic behavior; logic delay uncertainty; multiple-trap RTN extraction; operational stability; random telegraph noise; short-term BTI; statistical measurement analysis; undoped channel; Couplings; Delay; Field effect transistors; Hidden Markov models; Logic gates; Noise; Resource description framework;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479071

Filename

6479071