DocumentCode
3544196
Title
AC transconductance: A novel method to characterize oxide traps in advanced FETs without a body contact
Author
Sun, Xinghua ; Xu, Ningsheng ; Xue, Feng ; Alian, A. ; Andrieu, F. ; Nguyen, B.Y. ; Poiroux, T. ; Faynot, O. ; Lee, Jeyull ; Cui, Shuguang ; Ma, T.P.
Author_Institution
Yale Univ., New Haven, CT, USA
fYear
2012
fDate
10-13 Dec. 2012
Abstract
A novel ac transconductance method for oxide trap characterization is introduced, validated and demonstrated on two advanced FETs without a body contact, including Si Ultra-Thin-Body and BOX (UTBB) Fully Depleted (FD) SOI MOSFETs and InGaAs MOSFETs. The proposed method can extract the energy and spatial distributions of oxide traps in a variety of device structures, gate areas, and channel materials.
Keywords
III-V semiconductors; MOSFET; elemental semiconductors; silicon; silicon-on-insulator; AC transconductance method; FD; InGaAs; Si; Si ultrathin-body and BOX fully depleted SOI MOSFET; UTBB; body contact; channel material; energy extraction; oxide trap characterization; spatial distribution; Dispersion; Indium gallium arsenide; Logic gates; MOSFETs; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479074
Filename
6479074
Link To Document