Title :
Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time
Author :
Koveshnikov, S. ; Matthews, K. ; Min, Kyoungdoug ; Gilmer, D.C. ; Sung, M.G. ; Deora, S. ; Li, H.F. ; Gausepohl, S. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
We have developed novel real-time methodology to determine intrinsic forming and switching characteristics of HfOx based RRAM. Elimination of parasitics in 50nm × 50nm cross-bar 1T1R devices (Cp<; 50fF) integrated on 300mm wafers using fab-friendly TiN electrodes enabled superior control of high and low resistance of a conductive filament (CF). Sub 50fF parasitics also critically enable a pulsed forming method compatible with high volume manufacturing (HVM). A novel assessment of RRAM operation trade-offs is also made. For example, the trade off in set/reset voltage tuning, variability, current and speed is determined. These trade-offs are significant to quantitatively assess intrinsic potential and limitations of HfOx based RRAM for future memory applications.
Keywords :
forming processes; random-access storage; real-time systems; semiconductor device manufacture; 1T1R devices; HVM; HfOx; RRAM operation trade-offs; TiN; conductive filament; high volume manufacturing; intrinsic forming; intrinsic tunability; pulsed forming method; real-time methodology; real-time study; reset voltage; switching characteristics; switching kinetics; switching time trade-off; Hafnium oxide; Real-time systems; Resistance; Switches; Temperature dependence; Temperature distribution; Temperature measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479080
