Title :
Suppression of crosstalk by using backside deep trench isolation for 1.12μm backside illuminated CMOS image sensor
Author :
Kitamura, Yoshifumi ; Aikawa, H. ; Kakehi, Katsuhiko ; Yousyou, T. ; Eda, K. ; Minami, Takuya ; Uya, S. ; Takegawa, Yoshinari ; Yamashita, Hiromasa ; Kohyama, Y. ; Asami, Takuya
Author_Institution :
Image Sensor Technol. Dev. Dept., Toshiba Corp., Oita, Japan
Abstract :
1.12μm backside illuminated CMOS image sensor with backside deep trench isolation (DTI) has been demonstrated for the first time. DTI is fabricated on backside pixel surface after wafer bonding and grinding process. Backside DTI makes its layout simple because no transistor isolation exists on backside. We have confirmed about 50% reduction of crosstalk by using backside DTI. The crosstalk of 1.12μm backside DTI pixel is lower than that of 1.4μm BSI pixel. This technology will be promising for 1.12μm and beyond.
Keywords :
CMOS image sensors; crosstalk; grinding; interference suppression; isolation technology; wafer bonding; BSI; CMOS image sensor; backside DTI; backside illumination; backside pixel surface; crosstalk suppression; deep trench isolation; grinding process; optical fabrication; size 1.12 mum; wafer bonding; CMOS image sensors; Crosstalk; Diffusion tensor imaging; Image color analysis; Layout; Optical crosstalk; Reflection;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479093
