Energy landscape model of conduction and switching in phase change memories

We present a new physical model for electrical conduction and switching in the amorphous phase of phase change memory (PCM) devices. The model describes non-homogeneous conductivity by an energy landscape of Poole-Frenkel (PF) barriers. The model accounts for the thickness dependence of conduction in the amorphous state and can predict threshold switching characteristics through a simplified thermal description. The proposed model can also be applied to predict phase-change programming characteristics, correctly capturing the gradual transition between crystalline and amorphous state in the programming curve of phase change memory devices.