DocumentCode
3544490
Title
Nonlinear pulse compression lines concepts
Author
Zucker, Oved S.
Author_Institution
Polarix Corp., San Diego, CA, USA
fYear
2013
fDate
16-21 June 2013
Firstpage
1
Lastpage
1
Abstract
Summary form only given. Previous work by this author has identified three key elements for optimizing the performance of NL lines. These include the superiority of resonant complementary lines1,2 where i) both saturable inductances and saturable capacitances are used; ii) parasitic inductances and capacitances need to maintain a unique impedance relation with the individual stage impedances for highest efficiency; iii) there is an optimum number of stages for peak efficiency for any given power multiplication; iv) the quantity W*G, (the product of the power multiplication G by the energy compressed W is limited by the area under the non-linear B vs. H and the D vs. E curves of the nonlinear elements used; and v) the charge /unit area Ds in the saturable capacitors is the largest when photoconductivity3 is used for charge generation with many orders of magnitude larger than nonlinear dielectric Veractors, storage diodes and even one shot fuses.We describe the use of photoconductors as both saturable inductors and saturable capacitors in such lines and describe our present work with GaN based photoconductors and their potential as the key nonlinearities in compression lines in the sub nanosecond range.
Keywords
III-V semiconductors; capacitors; gallium compounds; inductors; photoconducting materials; power transmission lines; pulse compression; wide band gap semiconductors; GaN; GaN based photoconductors; NL lines; charge generation; impedance relation; nonlinear elements; nonlinear pulse compression lines; parasitic capacitances; parasitic inductances; peak efficiency; photoconductivity; power multiplication; resonant complementary lines; saturable capacitances; saturable inductances; Capacitance; Capacitors; Energy storage; Fuses; Impedance; Photoconducting materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science (ICOPS), 2013 Abstracts IEEE International Conference on
Conference_Location
San Francisco, CA
ISSN
0730-9244
Type
conf
DOI
10.1109/PLASMA.2013.6633205
Filename
6633205
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