• DocumentCode
    3544550
  • Title

    Programming analog computational memory elements to 0.2% accuracy over 3.5 decades using a predictive method

  • Author

    Bandyopadhyay, Abhishek ; Serrano, Guillermo J. ; Hasler, Paul

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    2148
  • Abstract
    This paper describes a new predictive algorithm that can be used for programming large arrays of analog computational memory elements within 0.2% of accuracy for 3.5 decades of currents. The average number of pulses required are 7-8 (20 μs each). This algorithm uses hot-electron injection for accurate programming and Fowler-Nordheim tunneling for global erase. This algorithm has been tested for programming 1024×16 and 96×16 floating-gate arrays in 0.25 μm and 0.5 μm N-well CMOS processes, respectively.
  • Keywords
    CMOS memory circuits; digital storage; predictive control; programming; 0.25 micron; 0.5 micron; Fowler-Nordheim tunneling; N-well CMOS processes; analog computational memory element programming; global erase; hot-electron injection; predictive algorithm; Analog computers; CMOS process; Circuits; EPROM; Image storage; Nonvolatile memory; Pulse width modulation; Space vector pulse width modulation; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465045
  • Filename
    1465045