Title :
Femtosecond interferometry for analysis of internal bond interface delamination in semiconductor devices
Author :
Cartwright, Alexander N. ; Merkel, N.A. ; Blasczak, M.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
Abstract :
Summary form only given. We developed an ultrafast Twyman-Green interferometer to monitor deformations in the bonding layer between two materials. Using femtosecond pulses with photon energies in the transparent regime of the top semiconductor layer, we can image, in real time, any debonding at internal interfaces. These composite multilayered semiconductor structures are widely used in electronic packaging.
Keywords :
bonds (chemical); delamination; high-speed optical techniques; light interferometry; semiconductor device packaging; semiconductor device testing; semiconductor materials; bonding layer; composite multilayered semiconductor structures; electronic packaging; femtosecond light interferometry; femtosecond pulses; internal bond interface delamination; photon energies; real time; semiconductor devices; transparent regime; ultrafast Twyman-Green interferometer; Bonding; Delamination; Interferometry; Laser beams; Laser theory; Mirrors; Optical pulses; Pump lasers; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676295
