Fabrication and characterization of silicon-based Ba0.7Sr0.3TiO3 thin films for FeFET applications

Ferroelectric Ba_0.7Sr_0.3TiO₃ thin films have been fabricated as MFIS and MFM configurations using sol-gel technique to study the possibility of using these films in FeFET applications. To ensure the quality of the films, the dielectric properties of the material within MFM structure have been investigated using an impedance analyzer which shows good quality for the films. The ferroelectric properties of the MFM type films were studied using Sawyer-Tower circuit. The films show hysteresis loop, its strength increases with the film thickness which is attributed the grain size effect. Whereas the ferroelectric properties of the MFIS type films were studied using capacitance-voltage (C-V) characteristics. The films show memory window its width increases with the film thickness which is also attributed the grain size effect.