• DocumentCode
    3544665
  • Title

    Impact of ultra low power and fast write operation of advanced perpendicular MTJ on power reduction for high-performance mobile CPU

  • Author

    Kitagawa, Eiji ; Fujita, S. ; Nomura, Keigo ; Noguchi, Hiroki ; Abe, Kiyohiko ; Ikegami, Kenshin ; Daibou, T. ; Kato, Yu ; Kamata, Chikayoshi ; Kashiwada, Shintaro ; Shimomura, Naoharu ; Ito, Junichi ; Yoda, Hidehiko

  • Author_Institution
    Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    We demonstrated lower power consumption of mobile CPU by replacing high-performance (HP)-SRAMs with spin transfer torque (STT)-MRAMs using perpendicular (p)-MTJ. The key points that enable the low power consumption are adapting run time power gating architecture (shown in Fig. 1), and satisfying both fast and low-power writing, namely, 3 nsec and 0.09 pJ, of p-MTJ cell (shown in Fig. 3). As shown in Table 1, only our developed p-MTJ has achieved 3 nsec, 0.09 pJ. Thanks to the fast and low-power p-MTJ, the power consumption of cache memory could be reduced by over 80% without degradation of performance.
  • Keywords
    SRAM chips; cache storage; magnetic tunnelling; HP-SRAM; STT-MRAM; advanced perpendicular MTJ; cache memory; fast write operation; high-performance mobile CPU; high-performance-SRAM; p-MTJ cell; perpendicular-MTJ; power consumption; power reduction; run time power gating architecture; spin transfer torque-MRAM; ultralow power operation; Damping; Magnetic fields; Magnetic tunneling; Mobile communication; Programming; Random access memory; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479129
  • Filename
    6479129