• DocumentCode
    3544700
  • Title

    Improved reliability and switching performance of atom switch by using ternary Cu-alloy and RuTa electrodes

  • Author

    Tada, Mitsunori ; Sakamoto, Takanori ; Banno, N. ; Okamoto, K. ; Miyamura, Makoto ; Iguchi, Noriyuki ; Hada, Hiromitsu

  • Author_Institution
    Low-Power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    For the first time, Cu(AlTi)-alloy active-electrode coupled with RuTa inert-electrode is proposed to improve the reliability of nonvolatile Cu atom switch. The remarkably high rupture temperature (Tr >400oC) of the nanometer-scale Cu bridge with the high thermal resistance (Rth) is realized by the Cu-alloy without increasing programming current. The anti-Cu diffusive, RuTa-alloy improves the retention of the ON-state at 150oC and endurance to >104 cycles. The metallurgical prescription is a key to improve the reliability and switching performance of the conducting bridge.
  • Keywords
    aluminium alloys; bridge circuits; copper alloys; nanoelectronics; rubidium alloys; semiconductor device reliability; semiconductor switches; tantalum alloys; ternary semiconductors; thermal resistance; titanium alloys; CuAlTi; ON-state; RuTa; active-electrode; conducting bridge; inert-electrode; metallurgical prescription; nanometer-scale bridge; nonvolatile atom switch; programming current; reliability; rupture temperature; switching performance; temperature 150 C; ternary electrode; thermal resistance; Atomic layer deposition; Bridge circuits; Bridges; Electrodes; Reliability; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479133
  • Filename
    6479133