Title :
Evidence for an atomistic-doping induced variability of the band-to-band leakage current of nanoscale device junctions
Author :
Ghetti, Andrea ; Compagnoni, C. Monzio ; Digiacomo, L. ; Vendrame, L. ; Spinelli, Alessandro S. ; Lacaita, Andrea L.
Author_Institution :
Process R&D, Micron Technol. Inc., Agrate Brianza, Italy
Abstract :
We show here for the first time that the band-to-band (B2B) leakage current of nanoscale p-n junctions has a significant statistical dispersion caused by the atomistic nature of both the n-type and the p-type doping. As a result, the B2B current displays a log-normal distribution, with a spread increasing with the scaling of the junction width. This spread may largely increase the average device leakage and, in turn, increase power dissipation in future technologies.
Keywords :
doping; leakage currents; log normal distribution; nanotechnology; p-n junctions; atomistic-doping induced variability; band-to-band leakage current; log-normal distribution; n-type doping; nanoscale device junctions; nanoscale p-n junctions; p-type doping; power dissipation; statistical dispersion; Doping; Junctions; Leakage current; Logic gates; Nanoscale devices; Semiconductor process modeling; Temperature measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479136