GaAs/AlGaAs multiple-wavelength vertical-cavity laser arrays on p substrates with periodic wavelength variations

Author

Yuen, W. ; Li, G.S. ; Chang-Hasnain, C.J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

368

Abstract

Summary form only given. We demonstrate GaAs-AlGaAs multiple wavelength (MW)-VCSEL arrays on p substrates with periodic wavelength variations for the first time. We achieved cw lasing wavelength span of 24 nm, threshold current <5 mA, and output power >3 mW. With further design and growth optimization, these MW-VCSEL arrays will have practical use in cost-effective WDM LAN applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical fibre LAN; optical transmitters; semiconductor laser arrays; surface emitting lasers; wavelength division multiplexing; 3 mW; 5 mA; GaAs-AlGaAs; GaAs-AlGaAs multiple wavelength VCSEL arrays; cost-effective WDM LAN applications; cw lasing wavelength span; growth optimization; multiple-wavelength vertical-cavity laser arrays; output power; p substrates; periodic wavelength variations; threshold current; Gallium arsenide; Local area networks; Molecular beam epitaxial growth; Optical arrays; Quantum well lasers; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676315

Filename

676315