DocumentCode :
3544728
Title :
GaAs/AlGaAs multiple-wavelength vertical-cavity laser arrays on p substrates with periodic wavelength variations
Author :
Yuen, W. ; Li, G.S. ; Chang-Hasnain, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
368
Abstract :
Summary form only given. We demonstrate GaAs-AlGaAs multiple wavelength (MW)-VCSEL arrays on p substrates with periodic wavelength variations for the first time. We achieved cw lasing wavelength span of 24 nm, threshold current <5 mA, and output power >3 mW. With further design and growth optimization, these MW-VCSEL arrays will have practical use in cost-effective WDM LAN applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical fibre LAN; optical transmitters; semiconductor laser arrays; surface emitting lasers; wavelength division multiplexing; 3 mW; 5 mA; GaAs-AlGaAs; GaAs-AlGaAs multiple wavelength VCSEL arrays; cost-effective WDM LAN applications; cw lasing wavelength span; growth optimization; multiple-wavelength vertical-cavity laser arrays; output power; p substrates; periodic wavelength variations; threshold current; Gallium arsenide; Local area networks; Molecular beam epitaxial growth; Optical arrays; Quantum well lasers; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.676315
Filename :
676315
Link To Document :
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