Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

Author

Wang, Wei Jhih ; Loke, D. ; Law, L.T. ; Shi, L.P. ; Zhao, Rong ; Li, Michael H. ; Chen, L.L. ; Yang, H.X. ; Yeo, Y.C. ; Adeyeye, A.O. ; Chong, T.C. ; Lacaita, Andrea L.

Author_Institution

Data Storage Inst., A*STAR, Singapore, Singapore

fYear

2012

fDate

10-13 Dec. 2012

Abstract

Phase-change memory (PCM) represents one of the best candidates for a “universal memory”. However, its slow SET speed, high RESET power, and high resistance drift present key challenges towards this ambition. Here, grain-engineered Ge₂Sb₂Te₅ is exploited to control the crystallization kinetics, and electrical properties of PCM. We report 120 % higher SET speeds with respect to conventional scaling. Good stability (140°C), 30 % RESET power reduction, and 2X lower resistance drift were also achieved. A 4-state/2-bit multilevel cell was further demonstrated. This provides a route to making high-density PCM devices.

Keywords

germanium compounds; phase change memories; Ge₂Sb₂Te₅; PCM; crystallization kinetics; grains engineering; phase-change memories; stability; temperature 140 C; universal memory; Crystallization; Films; Grain size; Phase change materials; Resistance; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479143

Filename

6479143