Sub-30 nm InAs Quantum-Well MOSFETs with self-aligned metal contacts and Sub-1 nm EOT HfO2 insulator

Sub-30 nm III-V planar Quantum-Well (QW) n-type MOSFETs are fabricated through a self-aligned CMOS compatible front-end process. Good performance and short-channel effect mitigation are obtained through the use of a QW-channel that incorporates a thin pure InAs subchannel and extremely scaled HfO₂ gate dielectric on a very thin InP barrier (total barrier EOT<;1 nm). The devices also feature self-aligned metal contacts that are 20-30 nm away from the edge of the gate. At L_g=30 nm, transconductance of 1420 ìS/ìm and subthreshold swing of 114 mV/dec at 0.5 V are obtained. 22-nm gate-length devices are demonstrated through this process. Long-channel devices exhibit nearly ideal subthreshold swing of 69 mV/dec, and high channel mobility of 4650 cm²V^-1s^-1 at N_s=4×10¹² cm^-2.