Author :
Kim, Tae-Woo ; Kim, Dongkyu ; Koh, D.-H. ; Hill, R.J.W. ; Lee, Rinus T. P. ; Wong, Man Hoi ; Cunningham, T. ; del Alamo, Jesus A. ; Banerjee, Sanjay K. ; Oktyabrsky, Serge ; Greene, Andrew ; Ohsawa, Yukio ; Trickett, Y. ; Nakamura, G. ; Li, Qifeng ; Lau,
Abstract :
This paper reports Extremely-Thin-Body (ETB) InAs quantum-well (QW) MOSFETs with improved electrostatics down to Lg = 50 nm (S =103 mV/dec, DIBL = 73 mV/V). These excellent metrics are achieved by using extremely thin body (1/3/1 nm InGaAs/InAs/InGaAs) quantum well structure with optimized layer design and a high mobility InAs channel. The ETB channel does not significantly degrade transport properties as evidenced by gm >1.5 mS/μm and vinj = 2.4 × 10 cm/s.
Keywords :
III-V semiconductors; MOSFET; indium compounds; semiconductor quantum wells; ETB channel; ETB-QW MOSFET; InAs; extremely-thin-body quantum-well MOSFET; high mobility channel; improved electrostatics; optimized layer design; scaled body; thin body quantum well structure; Aluminum oxide; Electrostatics; Immune system; Logic gates; MOSFET circuits; Silicon; Transconductance;
