Long-wavelength velocity-matched distributed photodetectors

Author

Chau, T. ; Fan, L. ; Tong, D.T.K. ; Mathai, S. ; Wu, M.C. ; Sivco, D.J. ; Cho, A.Y.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

377

Abstract

Summary form only given. We have experimentally demonstrated an InGaAs-InAlGaAs-InP high-speed, high-power long wavelength velocity matched distributed photodetector (VMDP) using optical lithography. A 3-dB bandwidth of 18-GHz and an overall quantum effiency of 34% have been achieved.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; optical fabrication; optical waveguides; photodetectors; photolithography; 18 GHz; 34 percent; InGaAs-InAlGaAs-InP; InGaAs-InAlGaAs-InP high-speed high-power long wavelength velocity matched distributed photodetector; high-power long wavelength velocity matched distributed photodetector; long-wavelength velocity-matched distributed photodetectors; optical lithography; overall quantum effiency; Current measurement; Frequency measurement; High speed optical techniques; Optical scattering; Optical superlattices; Optical surface waves; Optical waveguides; Photodetectors; Photodiodes; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676335

Filename

676335