DocumentCode :
3544882
Title :
Design of a low voltage high precision CMOS bandgap reference
Author :
Su, Qin ; Yin, Yongsheng ; Deng, Honghui
Author_Institution :
Inst. of VLSI Design, Hefei Univ. of Technol., Hefei, China
fYear :
2009
fDate :
16-19 Aug. 2009
Abstract :
A novel curvature compensated low voltage high precision CMOS bandgap reference is introduced in this paper. It adopts a self-biased low-voltage operational amplifier and the specific voltage transfer cell to achieve the features of low power supply and low temperature coefficient with better curvature compensation. A T-type resistor network is designed to reduce the total resistances and therefore to lower the chip area. We simulate the circuit using the Cadence Hspice based on SMIC 0.18 um model. The simulation results show that the circuit has an accuracy of 6.8 ppm/degC with the range from -35degC to 110degC, a power supply rejection ratio (PSRR) of -90 dB and low power consumption of 36.46 uW.
Keywords :
CMOS integrated circuits; circuit simulation; low-power electronics; operational amplifiers; Cadence Hspice simulation; T-type resistor network; chip area lowering; circuit simulation; curvature compensation; low power supply; low temperature coefficient; low-voltage high-precision CMOS bandgap reference; self-biased low-voltage operational amplifier; specific voltage transfer cell; temperature -35 degC to 110 degC; total resistance reduction; CMOS technology; Circuit simulation; Instruments; Low voltage; Operational amplifiers; Photonic band gap; Power supplies; Resistors; Silicon; Temperature dependence; bandgap reference; curvature compensated; low voltage; operational amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Measurement & Instruments, 2009. ICEMI '09. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3863-1
Electronic_ISBN :
978-1-4244-3864-8
Type :
conf
DOI :
10.1109/ICEMI.2009.5274562
Filename :
5274562
Link To Document :
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