DocumentCode :
3544885
Title :
New chip-to-wafer 3D integration technology using hybrid self-assembly and electrostatic temporary bonding
Author :
Fukushima, Tetsuya ; Hashiguchi, Hironori ; Bea, Jichel ; Ohara, Yuki ; Murugesan, Mariappan ; Lee, Kahyun ; Tanaka, T. ; Koyanagi, Mitsumasa
Author_Institution :
NICHe, Sendai, Japan
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
We proposed a new chip-to-wafer 3D integration technology using hybrid self-assembly and electrostatic temporary bonding. In the hybrid self-assembly-based chip-to-wafer 3D integration (HSA-CtW), liquid surface-tension-driven chip self-assembly is combined with high-speed robotic pick-and-place chip assembly and electrostatic multichip temporary bonding. Hybrid self-assembly can realize high-throughput chip assembly of above 10,000 chips/hour with a high alignment accuracy of <; 1 μm. The electrostatic multichip temporary bonding technique enabled stress-free direct bonding of self-assembled chips. We obtained good electrical characteristics from 3D stacked chips fabricated by HSA-CtW using Cu/SnAg microbumps and Cu-TSVs.
Keywords :
electrostatics; three-dimensional integrated circuits; wafer bonding; 3D stacked chips; Cu-SnAg; TSV; chip-to-wafer 3D integration technology; electrostatic multichip temporary bonding; electrostatic temporary bonding; high-speed robotic pick-and-place chip assembly; high-throughput chip assembly; hybrid self-assembly; liquid surface-tension-driven chip self-assembly; stress-free direct bonding; Accuracy; Assembly; Bonding; Clamps; Electrostatics; Self-assembly; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479157
Filename :
6479157
Link To Document :
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