• DocumentCode
    3544885
  • Title

    New chip-to-wafer 3D integration technology using hybrid self-assembly and electrostatic temporary bonding

  • Author

    Fukushima, Tetsuya ; Hashiguchi, Hironori ; Bea, Jichel ; Ohara, Yuki ; Murugesan, Mariappan ; Lee, Kahyun ; Tanaka, T. ; Koyanagi, Mitsumasa

  • Author_Institution
    NICHe, Sendai, Japan
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    We proposed a new chip-to-wafer 3D integration technology using hybrid self-assembly and electrostatic temporary bonding. In the hybrid self-assembly-based chip-to-wafer 3D integration (HSA-CtW), liquid surface-tension-driven chip self-assembly is combined with high-speed robotic pick-and-place chip assembly and electrostatic multichip temporary bonding. Hybrid self-assembly can realize high-throughput chip assembly of above 10,000 chips/hour with a high alignment accuracy of <; 1 μm. The electrostatic multichip temporary bonding technique enabled stress-free direct bonding of self-assembled chips. We obtained good electrical characteristics from 3D stacked chips fabricated by HSA-CtW using Cu/SnAg microbumps and Cu-TSVs.
  • Keywords
    electrostatics; three-dimensional integrated circuits; wafer bonding; 3D stacked chips; Cu-SnAg; TSV; chip-to-wafer 3D integration technology; electrostatic multichip temporary bonding; electrostatic temporary bonding; high-speed robotic pick-and-place chip assembly; high-throughput chip assembly; hybrid self-assembly; liquid surface-tension-driven chip self-assembly; stress-free direct bonding; Accuracy; Assembly; Bonding; Clamps; Electrostatics; Self-assembly; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479157
  • Filename
    6479157