DocumentCode :
3544896
Title :
Saturation of semiconductor optical amplifiers due to amplified spontaneous emission
Author :
Obermann, K. ; Liu, Tiegen ; Petermann, K. ; Girardin, F. ; Guekos, G.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
379
Lastpage :
380
Abstract :
Summary form only given. We solved the nonlinear integral equation for the carrier density by the method of fixed-point iteration for different SOA lengths. We also investigated the reduction in the gain recovery time due to the saturation caused by ASE, which is important for both linear and nonlinear applications. The spontaneous carrier lifetime can be reduced by approximately a factor of 10 when sufficiently long SOAs are used.
Keywords :
carrier density; carrier lifetime; optical saturation; semiconductor optical amplifiers; superradiance; amplified spontaneous emission; carrier density; fixed-point iteration; gain recovery time; linear application; nonlinear application; nonlinear integral equation; saturation; semiconductor optical amplifiers; spontaneous carrier lifetime; Charge carrier density; Electrons; Optical amplifiers; Optical saturation; Optical scattering; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission; Substrates; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.676339
Filename :
676339
Link To Document :
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