• DocumentCode
    3544944
  • Title

    Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET

  • Author

    Tsui, Bing-Vue ; Lu, Chi-Pei ; Liu, Hsiao-Han

  • Author_Institution
    Department ofElectronics Engineering and Institute ofElectronics, National Chiao Tung University, Hsinchu, Taiwan, R. O. C.
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Modified Schottky Barrier MOSFET with low resistance metal source/drain and good short channel effect immunity is one ofthe promising nano-scale device structures. In this work, a modified external load resistance method was proposed to extract the bias dependent source injection resistance of the MSB multi-gate MOSFET. The injection resistance is exponentially proportional to (VGS-Vth-O.5VDS) and would be close to the source/drain resistance of conventional MOSFET at high gate bias.
  • Keywords
    Annealing; Doping; Fabrication; Intrusion detection; Leakage current; MOSFET circuits; Nanoscale devices; Nanostructures; Schottky barriers; Silicides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5419372
  • Filename
    5419372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3544944