• DocumentCode
    3545282
  • Title

    Novel and robust constant-gm technique for rail-to-rail CMOS amplifier input stages

  • Author

    Yan, Shouli ; Hu, Jingyu ; Song, Tongyu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    2563
  • Abstract
    We present a new circuit technique for rail-to-rail constant-transconductance (gm) CMOS amplifier input stages, achieving constant transconductance and slew rate over the full input common-mode voltage range without degrading high-frequency performance. In addition, the technique does not rely on the quadratic characteristic of the input MOS transistors, and is robust to transconductance parameter mismatch between N and P input transistors. A CMOS amplifier input stage is designed in a standard 0.35-μm CMOS process. With a 3-V supply, the gm variation is kept within ±1% under nominal conditions and ±3% when there is ±40% mismatch of input transistor transconductance parameters. In addition, 114-MHz gain-bandwidth product is achieved with a 2 pF capacitive load. The proposed input stage can be applied in communications and VLSI cell libraries.
  • Keywords
    CMOS analogue integrated circuits; VLSI; amplifiers; electric potential; integrated circuit design; 0.35 micron; 2 pF; 3 V; VLSI cell libraries; capacitive load; gain-bandwidth product; quadratic characteristic; rail-to-rail CMOS amplifier input stages; rail-to-rail constant-transconductance CMOS amplifier input stages; slew rate; CMOS process; Circuits; Degradation; MOSFETs; Rail to rail amplifiers; Rail to rail inputs; Robustness; Transconductance; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465149
  • Filename
    1465149