Quantum capacitance: The deciding factor in nanometre regime for CNTFET

Author

Sinha, Sanjeet Kumar ; Choudhury, Saurabh

Author_Institution

Dept. of Electr. Eng., Nat. Inst. of Technol., Silchar, India

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

224

Lastpage

228

Abstract

Carbon nanotube based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance versus voltage characteristics. In this paper we compare and analyse the effect of gate capacitance on varying oxide thickness for silicon MOSTFET and CNTFET. It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and we find a favourable characteristics of decreasing gate capacitance with the decrease in the oxide thickness which is impossible to get in silicon MOSFET.

Keywords

MOSFET; carbon nanotube field effect transistors; nanoelectronics; CNTFET; carbon nanotube based FET devices; deciding factor; high channel mobility; improved gate capacitance; nanometre regime; quantum capacitance; silicon MOSFET; voltage characteristics; CNTFETs; Capacitance; Insulators; Logic gates; MOSFET circuits; Manganese; CNTFET; MOSFET; inversion layer capacitance; oxide-thickness; quantum capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Communication Control and Computing Technologies (ICACCCT), 2012 IEEE International Conference on

Conference_Location

Ramanathapuram

Print_ISBN

978-1-4673-2045-0

Type

conf

DOI

10.1109/ICACCCT.2012.6320775

Filename

6320775