Title :
20 dBm CMOS class AB power amplifier design for low cost 2 GHz-2.45 GHz consumer applications in a 0.13 μm technology
Author :
Knopik, Vincent ; Martineau, Baudouin ; Belot, Didier
Author_Institution :
Central R&D, STMicroelectronics, Crolles, France
Abstract :
The paper presents a medium power amplifier (PA) design for 2.4 GHz applications in pure 0.13 μm CMOS technology. The design has been done with reliability concern and presents high current layout considerations. It consists of evaluating the maximum current in the access lines and sizing the devices as well, without degrading the overall performance. The front end is composed of two stages using several transistors in cascade configuration. It can deliver at least 20 dBm at the maximum output power with a measured compression point better than 16 dBm. The chip has been integrated in 0.13 μm 1.2 V and 2.5 V STMicroelectronics CMOS technology. The power stage consumes 220 mA under 2.5 V.
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; electric current; integrated circuit design; integrated circuit reliability; 0.13 micron; 1.2 V; 2 to 2.45 GHz; 2.5 V; 220 mA; CMOS class AB power amplifier design; access line current; cascaded transistors; consumer applications; high current layout; medium power amplifier; reliability; CMOS technology; Costs; Equations; Impedance; Narrowband; Paper technology; Power amplifiers; Power generation; Radio frequency; Voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465177
