Title :
Design of novel voltage reference based on depletion device
Author :
Hongnan, Zhang ; Zhiwei, Zhang
Author_Institution :
Inst. of Phys. & Microelectron., Hunan Univ., Changsha, China
Abstract :
A novel voltage reference based on depletion device was developed with combination of depleted NMOS voltage reference and current reference independent to VDD. The circuit was designed with TSMC-0.25 mum mixed-signal process, and simulated by Spectre. The results indicated that TC is only 33 ppm/degC and PSRR can reach 62 dB at 10 KHz.
Keywords :
MOS integrated circuits; integrated circuit design; mixed analogue-digital integrated circuits; reference circuits; MOS integrated circuits; N-channel MOS transistor; Spectre; current reference; depletion device; mixed-signal process; voltage reference; Circuits; Current measurement; Energy management; Instruments; Low voltage; MOS devices; MOSFETs; Photonic band gap; Power supplies; Threshold voltage; bandgap; depletion; voltage reference;
Conference_Titel :
Electronic Measurement & Instruments, 2009. ICEMI '09. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3863-1
Electronic_ISBN :
978-1-4244-3864-8
DOI :
10.1109/ICEMI.2009.5274646
