DocumentCode
3545569
Title
Design of novel voltage reference based on depletion device
Author
Hongnan, Zhang ; Zhiwei, Zhang
Author_Institution
Inst. of Phys. & Microelectron., Hunan Univ., Changsha, China
fYear
2009
fDate
16-19 Aug. 2009
Abstract
A novel voltage reference based on depletion device was developed with combination of depleted NMOS voltage reference and current reference independent to VDD. The circuit was designed with TSMC-0.25 mum mixed-signal process, and simulated by Spectre. The results indicated that TC is only 33 ppm/degC and PSRR can reach 62 dB at 10 KHz.
Keywords
MOS integrated circuits; integrated circuit design; mixed analogue-digital integrated circuits; reference circuits; MOS integrated circuits; N-channel MOS transistor; Spectre; current reference; depletion device; mixed-signal process; voltage reference; Circuits; Current measurement; Energy management; Instruments; Low voltage; MOS devices; MOSFETs; Photonic band gap; Power supplies; Threshold voltage; bandgap; depletion; voltage reference;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Measurement & Instruments, 2009. ICEMI '09. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3863-1
Electronic_ISBN
978-1-4244-3864-8
Type
conf
DOI
10.1109/ICEMI.2009.5274646
Filename
5274646
Link To Document