Numerical investigation of RF pulsing effet on ion energy and angular distributions

Summary form only given. The ion energy and angular distributions (IEADs) arriving at a substrate strongly affect the etching rates in plasma etching processes. In order to determine the IEADs accurately, it is important to obtain the characteristics of radio frequency (rf) sheath at pulsed rf substrates. However, very few studies have been conducted on an rf sheath model for pulsed rf substrates. Therefore, in this work, we extended previous one-dimensional dynamics model for pulsed-bias electrodes. We obtained the IEADs using the developed rf sheath model and an analytic model for evaluation of the IEADs. We observed that the peak positions of the IEADs were shifted to the high-energy regime as the duty cycle increases.