DocumentCode :
3545734
Title :
Effective capacitance for gate delay with RC loads
Author :
Huang, Zhang-Cai ; Kurokawa, Atsushi ; Inoue, Yasuaki
Author_Institution :
Waseda Univ., Fukuoka, Japan
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
2795
Abstract :
In deep submicron designs, the resistance of interconnect plays a dominant role on the timing behavior of logic gates. The concept of effective capacitance Ceff is usually used to calculate the gate delay for interconnect loads. In this paper, a new method to derive the expression Ceff is presented, and the accuracy of the expression is discussed. In our approach, the output waveform is assumed as linear. Thus, the expression of effective capacitance is simple and efficient. Moreover, the result of effective capacitance is insensitive to output wave shape because Ceff is determined by the curve area. Therefore, it is appropriate for various output waveforms of a CMOS gate with RC loads. Experimental results show it is in agreement with the Spice simulation.
Keywords :
CMOS logic circuits; capacitance; integrated circuit interconnections; logic gates; timing; CMOS gate; RC loads; deep submicron designs; effective capacitance; gate delay; interconnect resistance; logic gates; timing behavior; Capacitance; Delay effects; Integrated circuit interconnections; Logic design; Logic gates; Semiconductor device modeling; Shape; Timing; Voltage; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1465207
Filename :
1465207
Link To Document :
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