Title :
Effective capacitance for gate delay with RC loads
Author :
Huang, Zhang-Cai ; Kurokawa, Atsushi ; Inoue, Yasuaki
Author_Institution :
Waseda Univ., Fukuoka, Japan
Abstract :
In deep submicron designs, the resistance of interconnect plays a dominant role on the timing behavior of logic gates. The concept of effective capacitance Ceff is usually used to calculate the gate delay for interconnect loads. In this paper, a new method to derive the expression Ceff is presented, and the accuracy of the expression is discussed. In our approach, the output waveform is assumed as linear. Thus, the expression of effective capacitance is simple and efficient. Moreover, the result of effective capacitance is insensitive to output wave shape because Ceff is determined by the curve area. Therefore, it is appropriate for various output waveforms of a CMOS gate with RC loads. Experimental results show it is in agreement with the Spice simulation.
Keywords :
CMOS logic circuits; capacitance; integrated circuit interconnections; logic gates; timing; CMOS gate; RC loads; deep submicron designs; effective capacitance; gate delay; interconnect resistance; logic gates; timing behavior; Capacitance; Delay effects; Integrated circuit interconnections; Logic design; Logic gates; Semiconductor device modeling; Shape; Timing; Voltage; Wire;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465207