Diffraction from oxide confinement apertures in VCSELs

Author

Roos, P.A. ; Carlsten, J.L. ; Kilper, D.C. ; Lear, K.L.

Author_Institution

Dept. of Phys., Montana State Univ., Bozeman, MT, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

446

Lastpage

447

Abstract

Summary form only given. We report direct measurement of the scattered field intensity from oxide-confinement aperture VCSELs. The devices in this experiment consist of 960-nm wavelength-matched AlGaAs laser cavities sandwiched between two oxide layers with rectangular apertures. Although each device operates in a single longitudinal mode, the number of transverse modes typically varies between one and six, depending on drive current.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; laser modes; laser transitions; light diffraction; semiconductor lasers; surface emitting lasers; 960 nm; AlGaAs; VCSELs; direct measurement; drive current; oxide confinement apertures; oxide layers; oxide-confinement aperture VCSELs; rectangular apertures; scattered field intensity; single longitudinal mode; transverse modes; wavelength-matched AlGaAs laser cavities; Anisotropic magnetoresistance; Apertures; Diffraction; Fluctuations; Frequency; Laser modes; Optical polarization; Optical scattering; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676478

Filename

676478