Yield enhancement due to carrier-injection behavior in truncated-well gain-coupled DFBs

Summary form only given. The achievement of a high yield of DFB quantum wells that lase in a single longitudinal mode is critical for the delivery of low-cost narrow-linewidth sources and photonic-integrated circuits. The use of gain-coupling has been successfully demonstrated as a means of achieving high single-mode yield, while also providing other advantages, such as high intrinsic bandwidth: improved reflection immunity and a front-facet external quantum efficiency, which is controllable by the asymmetry of the facet reflectivities. We report on the enhanced singlemode yield of 1.55-/spl mu/m truncated-well gain-coupled DFB laser structure that has been integrated with a Mach-Zehnder modulator.