Realization of distributed Bragg reflector laser for polarization-independent wavelength-conversion applications

Author

Gurib, S. ; Labourie, C. ; Gaumont-Goarin, E. ; Gaborit, F. ; Le Gourezigou, O. ; Jourdan, A. ; Soulage, G. ; Jacquet, Joel ; Laube, G.

Author_Institution

Alcatel Alsthom Recherche, Marcoussis, France

fYear

1996

fDate

2-7 June 1996

Firstpage

36

Lastpage

37

Abstract

Summary form only given. We have demonstrated the first polarization-insensitive tunable InGaAsP DBR laser for wavelength-conversion applications. Based an a nearly square bulk active stripe it shows a threshold current of 30 mA, a 7.5 nm tuning range, a 15 GHz relaxation frequency for 10 mW of output power, and less than 1 dB polarization.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser tuning; light polarisation; optical frequency conversion; semiconductor lasers; 10 mW; 30 mA; GHz relaxation frequency; InGaAsP; distributed Bragg reflector laser; nearly square bulk active stripe; nm tuning range; output power; polarization-independent wavelength-conversion applications; polarization-insensitive tunable InGaAsP DBR laser; threshold current; Distributed Bragg reflectors; Extinction ratio; Laser modes; Laser tuning; Optical waveguides; Optical wavelength conversion; Polarization; Power lasers; Semiconductor optical amplifiers; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864325