Injection locking between laser layers in an InP-InGaAsP bipolar cascade laser

Author

Laurent, N. ; Rondi, D. ; Leger, S. ; Rosencher, E.

Author_Institution

Lab. Central de Recherches, Thomson-CSF, Orsay, France

fYear

1998

fDate

3-8 May 1998

Firstpage

468

Lastpage

469

Abstract

Summary form only given. We show that 1.55-/spl mu/m InGaAsP bipolar cascade lasers display a smaller contact resistance (as small as 3/spl times/10/sup -5/ /spl Omega/.cm/sup 2/) than the GaAs-based ones and that laser layers can injection-lock each other. The structure has been grown by metalorganic chemical vapor deposition (MOCVD). The top laser diode is an SC-multiple quantum well (MQW) laser.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser mode locking; laser transitions; optical fabrication; quantum well lasers; 1.55 mum; InGaAsP; InP-InGaAsP; InP-InGaAsP bipolar cascade laser; MOCVD; MQW laser; contact resistance; injection-lock; laser injection locking; laser layers; metalorganic chemical vapor deposition; multiple quantum well laser; top laser diode; Chemical lasers; Chemical vapor deposition; Contact resistance; Diode lasers; Displays; Injection-locked oscillators; MOCVD; Quantum cascade lasers; Quantum well devices; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676506

Filename

676506